| PART |
Description |
Maker |
| RN4605 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| UP03312 |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
|
| FJN4307R FJN4307RBU |
PNP Epitaxial Silicon Transistor
Audio Transformer; Insertion Loss:46.8dB; Size:9.79 x 8.89 x 9.52 mm; Terminal Type:PCB Surface Mount 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HN1A01FUGR HN1A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
|
TOSHIBA
|
| BC327-16 BC328-16 BC327 BC327-25 BC327-40 BC328-40 |
Si-Epitaxial PlanarTransistors 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
Amplifier Transistors(PNP)
PNP general purpose transistor
|
KEC(Korea Electronics)
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Motorola Inc
Philips Semiconductors
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SA2077 |
Silicon PNP epitaxial planar type(Complementary to 2SC5845) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SB905 2SB905O 2SB905RSM 2SB905OSM 2SB905YSM |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1.5A I(C) | TO-252AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications
|
Panasonic, Corp.
TOSHIBA
|
| 2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1A条一（c）|26VAR
|
TOSHIBA
|
| RN2907FE RN2909FE RN2908FE |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
